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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD641
DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *Converters
*Inverters *Switching regulators *Motor controls
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS MAX 600 400 7 15 30 6 150 200 -65~200 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ; IB=0 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=500V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V IC=0.5A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 20 MIN 400 7
2SD641
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB
TYP.
MAX
UNIT V V
1.5 2.0 0.5 0.1 140 4 150
V V mA mA
MHz pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD641
Fig.2 Outline dimensions
3


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